ISSI 512Mbx8 and 256Mbx16 DDR4 SDRAM are high-speed dynamic random-access memory devices internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups each with four DRAM banks. DDR4 SDRAM uses a 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps making them ideal for telecom and networking, automotive, and industrial embedded computing.
Features
Standard Voltage: VDD = VDDQ = 1.2V, VPP=2.5VData integrityAuto Self Refresh (ASR) by DRAM built-in TSAuto Refresh and Self Refresh ModesDRAM access bandwidthSeparated IO gating structures by bank groupSelf refresh abortFine granularity refreshSignal synchronizationWrite leveling via MR settingsRead leveling via MPRReliability and error handlingCommand/Address parityData bus write CRCMPR readoutBoundary scan (x16)
Applications
Telecom/networkingSDN, NFVAccess and aggregation nodesSwitches and routersPacket optical transportNetwork storage (PON OLT, DSLAM, CMTS, Wireless)
