Taiwan Semiconductor 600V N-Channel Power MOSFETs are high-performance MOSFETs with small drain-source resistance (RDS(ON)). These 600V MOSFETs are constructed using a super-junction technology. The 600V N-channel power MOSFETs are 100% UIS and Rg tested, RoHS compliant, and halogen-free. Applications include PFC stage, server/telecom power, charging station, inverter, and power supply.
Features
Super-junction technologyHigh-performance, small R
DS(ON)Q
g Figure-of-Merit (FOM)High ruggedness performance100% UIS and R
g tested
Applications
PFC stageServer/telecom powerCharging station
