Wolfspeed/Cree CGHV40200PP GaN HEMT operates from a 50V rail and offers a broadband solution to RF and microwave applications. The Gan High Electron Mobility Transistors provide high efficiency, high gain, and wide bandwidth capabilities. These features make CGHV40200PP ideal for linear and compressed amplifier circuits. CGHV40200PP GaN HEMT is available in 4-lead flange package. Typical applications include 2-way radio, broadband amplifiers, radar amplifiers, and test instrumentation.
Features
Up to 2.7GHz operation21dB small signal gain at 1.8GHz
Specifications
200W Power output125V drain-source voltage at 25ºC
Applications
2-way private radioBroadband amplifiersRadar amplifiersTest instrumentationClass A, AB, and linear amplifiers suitable for OFDM, W-CDMA, EDGE, and CDMA waveforms
